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A maker of compound semiconductor substrate(supporting material) and template(thin layer) based on nitride semiconductors such as Gallium Nitride(GaN) and Aluminium Nitride(AlN) composition grown by Hydride Vapor Phase Epitaxy (HVPE) for ultra-high brightness (UHB) or high brightness (HB) LED and power electronics applications is looking for a R&D partner for Eurostars in 2018. The partner should be able to integrate the structure of Ultraviolet LEDs or power electronic devices on the template.
The Korean maker of compound semiconductor substrate (a supporting material on which a circuit is formed or fabricated) and template has been in the semiconductor industry for the past 10 years. The company produces Gallium Nitride (GaN) wafer and template for HB (High brightness) LEDs and Power electronics applications. Another main product by the company is Aluminum Nitride(AIN) and Aluminium Gallium Nitride (AIGaN) template for UV LEDs and power electronics applications. The company has expertise in growth technologies of nitride semiconductors and mechanical polishing and chemical mechanical polishing technologies for the Gan, AIN, AIGaN compositions.
The company is interested in finding partners to improve the quality of UV LEDs or power electronic devices on the company’s AlN and/or AlGaN template. The company has the technological expertise on AlN template and potential partner would preferably have the technological expertise on UV LEDs or power electronic devices. As the results of these cooperation, the company will have the chance to improve the adoption effect of AlN template for UV LEDs or power electronic devices and possible partner will obtain the new version of UV LEDs or power electronic devices with excellent properties at their application.
Each partner’s role in this R&D cooperation will be as shown below:
- The company is expected to:
→ supply AlN template to the partner
→ receive the feedback results and requirements from the partner
→ develop a new AlN template for requirements
→ expected result: improved qualities of the company’s AlN template for UV LEDs or Power electronic devices.
- Potential partner is expected to:
→ develop and evaluate the UV LEDs or power electronic devices on the company’s AlN template using their own technology.
→ give feedback of the results and request for the necessary requirements from the company to improve the product.
→ develop and evaluate the UV LEDs or power electronic devices on new AlN template using the partner’s own technology.
→ Expected result: evaluate the adoption effects of the company’ AlN template for UV LEDs or power electronic devices
The company has experience of exporting GaN templates and substrates to USA and Japan. The company owns patents in Korea, Japan, USA, and Patent Cooperation Treaty (PCT), signed by more than 152 countries. The R&D system is robust as the company has published 6 research papers in Korean and international journals related to the crystal technology. The company presented their technology at renowned Korean and international forums, exhibitions, conference, etc for more than 30 times. The company wishes to submit a proposal for Eurostars 2 this year with a potential partner preferably in September. This profile is open for EoI until August 19th, 2018.
- The company has rich experience in the growth of GaN layers by Hydrate Vapor Phase Epitaxy (HVPE), a high rate deposition process for growing high quality crystals, with quartz parts.
- The company’s AIN and AIGaN templates have been evaluated to have an excellent quality. The values of full width at half maximum (FWHM) of a rocking curve (RC) for the (102) plane of AIN were developed in less than 450 arcsec. The quality is better when the number is smaller, and the usual value of FWHM is 600 arcsec. This means that the company’s crystal is of a very high and stable quality.
Type of partner sought: research institute, university or company
Specific area of activity of the partner:Fabrication technology expertise of UV LEDs or Power electronic devices
Task to be performed: Integration of the UV LED structure or power devices on the company’s wafer or template