Summary
- Profile Type
- Technology offer
- POD Reference
- TODE20240809001
- Term of Validity
- 13 August 2024 - 13 August 2025
- Company's Country
- Germany
- Type of partnership
- Investment agreement
- Targeted Countries
- All countries
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General information
- Short Summary
- A German university developed new gallium nitride driver circuit that allows inverters and frequency converters to switch faster, enabling more efficient power electronics that can switch in the MHz range. The advantage of the new GaN driver circuit is that lower losses occur and higher power densities are achieved. The university offers a license agreement.
- Full Description
-
Power electronics use rapid-switching electronic components in such assemblies as inverters, frequency converters, and switching regulators to convert electrical energy. These electronic components must cost as little as possible, and some applications require very high power density or low weight. In addition to standard silicon (Si) semiconductors, there are silicon carbide (SiC) and gallium nitride (GaN) conductors that feature a wide band gap and allow very high switching frequencies.
A new invention from a German university is now using a new electronic circuit to control these GaN GIT semiconductor components. It involves at least one capacitor and a Zener diode connected in parallel. The advantage is that this driver circuit can control power semiconductors at high frequencies (in the megahertz range). The circuit wave shape improves control, reducing the number of components, including parasitic ones. It also allows negative gate control, even if unipolar supply is used in the gate driver circuit. Other advantages include reduced losses, increased power density, and a simpler circuit design.
The inventors are addressing all companies involved in semiconductor circuits and power electronics and are offering them a licence agreement. - Advantages and Innovations
-
GaN (gallium nitride) is an innovative semiconductor material that is enjoying increasing use in power supplies and charging devices. The crystalline material is a powerful alternative to conventional silicon. The invention can thus be used in many power electronics application areas, including e-vehicles and alternative energy sources.
The advantages in brief:
- Very high switching frequencies (MHz range)
- Driver circuit for GaN components
- Simple switching concept
- Allows symmetrical current distribution - Stage of Development
- Lab tested
- Sustainable Development Goals
- Goal 9: Industry, Innovation and Infrastructure
Partner Sought
- Expected Role of a Partner
- The inventors are addressing all companies involved in semiconductor circuits and power electronics and are offering them a licence agreement.
- Type and Size of Partner
- Big company
- SME 11-49
- SME <=10
- Other
- SME 50 - 249
- Type of partnership
- Investment agreement
Dissemination
- Technology keywords
- 01002001 - Micro and Nanotechnology related to Electronics and Microelectronics
- Market keywords
- 03004003 - Other electronics related equipment
- 03001001 - Semiconductors
- 03001004 - Other semiconductors
- Targeted countries
- All countries
